This article proposes a new dc solid-state circuit breaker (SSCB) based on silicon carbide (SiC) MOSFETs. There are two main contributions. First, a transient current commutation (TCC) is obtained in the main switch during current interruption. To achieve this, a compact and fast active injection circuit (AIC) is employed. TCC brings two main benefits: 1) it eliminates the effects of parasitic inductances in circuit connections and removes voltage oscillations on the gate of the main switch, which prevents spurious turn-on and 2) it eliminates the transient power shock on the switch during turn-off, which extends the lifetime of SSCB and increases its reliability. Second, the voltage on the employed metal oxide varistor (MOV) is reduced to zero during the OFF-state. This extends the maximum allowable dc bus voltage on the SSCB and solves the MOV reliability issue in the SSCBs. The presented SSCB employs a time-sequence control and needs no real-time detections of the dc current, which simplify the design. LTspice simulations of 380 V/80 A and 600 V/80 A are presented, and the results are compared with MOV-and MOV resistor-capacitor-diode (MOV-RCD)-based SSCBs. Also, experiments of a 380 V/80 A prototype validate the effectiveness of the proposed SSCB in practice where the voltage on the SSCB is clamped to 721 V with a fixed response time of 9.4 μ s.
|Original language||English (US)|
|Number of pages||12|
|Journal||IEEE Journal of Emerging and Selected Topics in Power Electronics|
|State||Published - Aug 1 2022|
All Science Journal Classification (ASJC) codes
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering