TY - GEN
T1 - A 4kV/100A SiC MOSFETs-based solid state DC circuit breaker with low stray inductances and powered by a load-independent wireless power transfer system
AU - Dongye, Zhonghao
AU - Wang, Yao
AU - Zhang, Hua
AU - Zheng, Sheng
AU - Lu, Xiaonan
AU - Lu, Fei
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/10/11
Y1 - 2020/10/11
N2 - This paper develops a 4kV/100A DC circuit breaker (DCCB) based on discrete SiC MOSFETs. The DCCB adopts a 5-layers tower structure and each layer has ten evenly distributed MOSFETs. The DCCB is powered by a wireless power transfer (WPT) system with multiple outputs and easy to scale. The DCCB we proposed has two main advantages. First, it has very low normally on-state power loss compared to traditional solid state breakers. The on-state efficiency is higher than 99.97%. Second, compared to the previous power supply system for the DCCB, the implemented WPT system has a good load-independent characteristic. The maximum efficiency of this WPT system is 87%, with a total power of 40 W at 200 kHz. Besides, An accurate equivalent model of the DCCB is established by including mutual inductances among different MOSFETs. According to this model, the mutual inductance could count on 40% of the total parasitic inductance.
AB - This paper develops a 4kV/100A DC circuit breaker (DCCB) based on discrete SiC MOSFETs. The DCCB adopts a 5-layers tower structure and each layer has ten evenly distributed MOSFETs. The DCCB is powered by a wireless power transfer (WPT) system with multiple outputs and easy to scale. The DCCB we proposed has two main advantages. First, it has very low normally on-state power loss compared to traditional solid state breakers. The on-state efficiency is higher than 99.97%. Second, compared to the previous power supply system for the DCCB, the implemented WPT system has a good load-independent characteristic. The maximum efficiency of this WPT system is 87%, with a total power of 40 W at 200 kHz. Besides, An accurate equivalent model of the DCCB is established by including mutual inductances among different MOSFETs. According to this model, the mutual inductance could count on 40% of the total parasitic inductance.
UR - http://www.scopus.com/inward/record.url?scp=85097129172&partnerID=8YFLogxK
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U2 - 10.1109/ECCE44975.2020.9235748
DO - 10.1109/ECCE44975.2020.9235748
M3 - Conference contribution
AN - SCOPUS:85097129172
T3 - ECCE 2020 - IEEE Energy Conversion Congress and Exposition
SP - 1279
EP - 1283
BT - ECCE 2020 - IEEE Energy Conversion Congress and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020
Y2 - 11 October 2020 through 15 October 2020
ER -