A 4 kV/120 A SiC Solid-State DC Circuit Breaker Powered by a Load-Independent IPT System

Shuyan Zhao, Zhonghao Dongye, Yao Wang, Xin Zan, Hua Zhang, Sheng Zheng, Xiaonan Lu, Al Thaddeus Avestruz, Fei Lu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This article introduces a 4 kV/120 A solid-state dc circuit breaker (DCCB) based on discrete SiC mosfets. The DCCB is designed in a five-layer tower structure. Each layer consists of a circular main conduction branch and an attached gate driver. There are two primary benefits of the proposed DCCB. First, it reduces conduction loss with multiple devices in parallel. Second, it achieves an ultrafast response speed with SiC mosfets. Moreover, the gate drivers of the DCCB are powered by a domino inductive power transfer (IPT) system. It achieves the load-independent constant-voltage output characteristics, which means the outputs are immune to load variations. An IPT system prototype is implemented to test the power transfer performance. At 500-kHz frequency, the total output power reaches 15.73 W, which is sufficient to power on five gate drivers, with a peak transfer efficiency of 75.4%. The IPT system is tested to power a 4 kV/120 A DCCB prototype. It validates that the DCCB is effective to turn off 120 A current within 3.5 μs.

Original languageEnglish (US)
Pages (from-to)1115-1125
Number of pages11
JournalIEEE Transactions on Industry Applications
Volume58
Issue number1
DOIs
StatePublished - 2022
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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